A technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ions
- W.N. Hammer
- Alwin E. Michel
- 2008
- Journal of Applied Physics
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35 results for Alwin E. Michel
Shallow junctions by high-dose As implants in Si: Experiments and modeling
- M.Y. Tsai
- F.F. Morehead
- et al.
- 2008
- Journal of Applied Physics
Saturation of the optical absorption in GaAs
- Alwin E. Michel
- Marshall I. Nathan
- 2004
- Applied Physics Letters
Modification of the threshold current and near-field emission pattern of a GaAs laser by an adsorbed dielectric layer
- E.J. Walker
- Alwin E. Michel
- 2004
- Journal of Applied Physics
Harmonic generation in injection lasers
- A.W. Smith
- M.I. Nathan
- et al.
- 2004
- Journal of Applied Physics
Light emission from reverse biased GaAs and InP p-n junctions
- Alwin E. Michel
- M.I. Nathan
- et al.
- 2004
- Journal of Applied Physics
Interference between the infrared beams from opposite ends of a GaAs laser
- Alwin E. Michel
- E.J. Walker
- 2004
- Journal of Applied Physics
Annealing properties of ion-implanted p-n junctions in silicon
- Alwin E. Michel
- F. Fang
- et al.
- 2003
- Journal of Applied Physics
Damage enhanced diffusion
- Alwin E. Michel
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Anomalous transient diffusion of ion implanted dopants: A phenomenological model
- Alwin E. Michel
- 1989
- Nuclear Inst. and Methods in Physics Research, B