Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
Conference paperHigh-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delayM. Hargrove, S.W. Crowder, et al.IEDM 1998
PaperElectrochemical characterization of adsorption-desorption of the cuprous-suppressor-chloride complex during electrodeposition of copperJohn G. Long, Peter C. Searson, et al.JES