Electrical transport and 1 / f noise in semiconducting carbon nanotubes

Abstract

We investigate electrical transport and noise in semiconducting carbon nanotubes. By studying carbon nanotube devices with various diameters and contact metals, we show that the ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1 / f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal. © 2006 Elsevier B.V. All rights reserved.