Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface. © 2011 IEEE.
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Yoonmyung Lee, Daeyeon Kim, et al.
IEEE Transactions on VLSI Systems
W. Chien, E. Lai, et al.
IMW 2023
S.W. Bedell, A. Majumdar, et al.
DRC 2008