PaperHigh-performance dual-gate carbon nanotube FETs with 40-nm gate lengthYu-Ming Lin, Joerg Appenzeller, et al.IEEE Electron Device Letters
PaperThe role of metal-nanotube contact in the performance of carbon nanotube field-effect transistorsZhihong Chen, Joerg Appenzeller, et al.Nano Letters
PaperThe role of metal-nanotube contact in the performance of carbon nanotube field-effect transistorsZhihong Chen, Joerg Appenzeller, et al.Nano Letters
Conference paperChannel and contact length scaling in carbon nanotube transistorsAaron D. Franklin, Ageeth A. Bol, et al.DRC 2010
