J. Falta, M. Copel, et al.
Physical Review B
This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.
J. Falta, M. Copel, et al.
Physical Review B
R. Rosenberg
MRS Spring Meeting 1994
D.L. Harame, J.M.C. Stork, et al.
IEDM 1993
F. Legoues, B.S. Meyerson, et al.
Physical Review Letters