S.J. Koester, J. Schaub, et al.
DRC 2004
We report electron transport properties of modulation-doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18 000 cm2/V s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000-10 000 Ω/ at 300 K and 450-700 Ω/ at 77 K. The low field electron drift velocity is 2-3 (5-10) times higher than the corresponding velocity measured in Si/SiO 2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation-doped Si/SiGe on device design and performance is investigated.
S.J. Koester, J. Schaub, et al.
DRC 2004
T.N. Jackson, S. Nelson, et al.
Device Research Conference 1993
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993
Huiling Shang, J.O. Chu, et al.
ECS Meeting 2006