1.1 GHz MSM photodiodes on relaxed Si_1-xGe_x grown by UHV-CVD

Abstract

Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.