U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Conference paper
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
Abstract
Results on MSM photodiodes fabricated on relaxed absorbing layers of single-crystal Si0.75Ge0.25 grown epitaxially on Si substrates are presented. These photodiodes have bandwidths in excess of 1 GHz and have the distinct advantage of being fully compatible with Si/SiGe which electron mobility transistors. The operation of the device is discussed.
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