Shahab Siddiqui, Min Dai, et al.
JVSTB
Using first principles calculations, we have studied the dielectric properties of crystalline α- and β-phase silicon germanium nitrides and silicon carbon nitrides, A 3 - ξ B ξ N4 (A = Si, B = Ge or C, ξ = 0, 1, 2, 3). In silicon germanium nitrides, both the high-frequency and static dielectric constants increase monotonically with increasing germanium concentration, providing a straightforward way to tune the dielectric constant of these materials. In the case of silicon carbon nitrides, the high-frequency dielectric constant increases monotonically with increasing carbon concentration, but a more complex trend is observed for the static dielectric constant, which can be understood in terms of competition between changes in the unit-cell volume and the average oscillator strength. The computed static dielectric constants of C3N4, Si3N4, and Ge3N4 are 7.13, 7.69, and 9.74, respectively. © 2013 AIP Publishing LLC.
Shahab Siddiqui, Min Dai, et al.
JVSTB
Choonghyun Lee, Richard G. Southwick, et al.
ASICON 2017
Tenko Yamashita, S. Mehta, et al.
VLSI Technology 2015
Choonghyun Lee, H. Kim, et al.
VLSI Technology 2016