Isotropic treatment of EMF effects in advanced photomasks
Jaione Tirapu Azpiroz, Alan E. Rosenbluth, et al.
SPIE Photomask Technology + EUV Lithography 2009
Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultra-low leakage, and high ON current densities exhibited by BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-5]. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect-ratio, thickness, and device CD. © 2014 IEEE.
Jaione Tirapu Azpiroz, Alan E. Rosenbluth, et al.
SPIE Photomask Technology + EUV Lithography 2009
Sanjay Kariyappa, Hsinyu Tsai, et al.
IEEE T-ED
Geoffrey W. Burr, Edmond Chow, et al.
NPIS 2005
S. Sidler, Irem Boybat, et al.
ESSDERC 2016