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Publication
SISPAD 2011
Conference paper
Critical analysis of 14nm device options
Abstract
Modeling challenges and solutions for silicon based high performance device options at the 14nm node are presented. A variety of devices are being considered, using a variety of methods to analyze the devices objectively. Partially depleted silicon on insulator (PDSOI) devices are compared against extremely thin (ETSOI) and FinFET devices. © 2011 IEEE.