On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling
- Takashi Ando
- Ninad D. Sathaye
- et al.
- 2011
- IEEE Electron Device Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.