Copper contact metallization for 22 nm and beyond

Abstract

We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM [1]. Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts. © 2009 IEEE.