Dzung Phan, Vinicius Lima
INFORMS 2023
In order to tackle the CMOS contact resistance bottleneck, we developed a contact cavity shaping process that leverages a Reactive Ion Etching (RIE) technology, and a selective highly doped SiGe epitaxial process allowing an active boron doping level of 2E21 at.cm-3. By co-optimizing these processes in the contact module on 300mm wafers, we demonstrate a record low transistor contact resistance of 11 Ω. μm of Weff with corresponding effective ρc of 5.2× 10-10 Ω.cm2, which translates into a device Ieff performance gain of 44/19% (median/leading edge).
Dzung Phan, Vinicius Lima
INFORMS 2023
Jehanzeb Mirza, Leonid Karlinsky, et al.
NeurIPS 2023
Hagen Soltau, Lidia Mangu, et al.
ASRU 2011
Liya Fan, Fa Zhang, et al.
JPDC