CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging

Abstract

This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI "virgin" (unreleased) transistors fabricated in the IBM 0.18μm RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC2·I and measured values of it are presented.