A. Krol, C.J. Sher, et al.
Surface Science
By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
A. Krol, C.J. Sher, et al.
Surface Science
Imran Nasim, Melanie Weber
SCML 2024
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids