Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers

Abstract

PFETs with embedded-eSiGe S/D are demonstrated for the first time on rotated wafers with 〈100〉 channels. Improved short-channel behavior is achieved. The performance variation is reduced because hole mobility is less sensitive to both transverse and longitudinal stress. Hence, embedded SiGe on rotated wafers have improved robustness for short-channel pFETs. ©2005 IEEE.