Nicholas A. Lanzillo, Utkarsh Bajpai, et al.
Physical Review Applied
The effects of dielectric constant, damage layer thickness, line aspect ratio, and linewidth ratio on Back-End-of-Line (BEOL) line capacitance are evaluated for line pitches down to 18nm using field-solver simulations. At fine pitches such as 18nm, the damage layer thickness becomes increasingly important. We demonstrate when it may be beneficial to choose a higher-dielectric-constant material which does not create a damage layer, over a somewhat lower-dielectric-constant material. We also show the capacitive effects of metal aspect ratio, and metal width ratio, on 18nm-pitch wires.
Nicholas A. Lanzillo, Utkarsh Bajpai, et al.
Physical Review Applied
Koichi Motoyama, Nicholas A. Lanzillo, et al.
IITC 2022
Nicholas A. Lanzillo, Daniel C. Edelstein
Journal of Vacuum Science and Technology B
Nicholas A. Lanzillo, Albert M. Chu, et al.
IEEE T-ED