Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Valence-band offsets for pseudomorphically strained InxGa1-xAs/AlyGa1-yAs ternary-on-ternary heterointerfaces have been calculated as a function of both indium and aluminum content. The unstrained valence-band offsets were considered within the virtual-crystal approximation, accounting for band parabolicity and alloy mixing. Strain was introduced as a perturbation with composition-dependent material parameters, and is shown to strongly influence the valence-band offsets. Equivalent conduction-band-offset ratios are shown to be nonconstant and extremely variable as a function of both In and Al content and are compared to recent experimental data. Various formalisms to calculate the partitioning coefficient for hydrostatic band-gap deformation are presented and discussed, and our analysis indicates that a significant portion of the band-gap variation induced by hydrostatic strain resides in the valence band. Investigation of the spin-split light-hole band level under strain indicates that both type-I and type-II heterointerfaces are achievable with an appropriate choice of compositions. © 1990 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993