L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti/Al metal gate.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A. Krol, C.J. Sher, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics