Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti/Al metal gate.
Imran Nasim, Melanie Weber
SCML 2024
R. Ghez, M.B. Small
JES
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999