Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi2 : the silicide behaviour under Ar+ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi2 At exposure up to 103 langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er2O3-like state. After the consumption of the available Er atoms in the surface layer, SiO2 starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide. © 1986.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry