Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The phenomenon of metastable phase formation during a constant temperature and constant pressure thin film reaction is explained by a kinetic model emphasizing the rate of transition. It is assumed that the reaction obeys a maximum time-dependent rather than time-independent negative free energy change. The product persists in the metastable state due to a high activation barrier to later transition. © 1991.
T.N. Morgan
Semiconductor Science and Technology
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