R. Ghez, J.S. Lew
Journal of Crystal Growth
The phenomenon of metastable phase formation during a constant temperature and constant pressure thin film reaction is explained by a kinetic model emphasizing the rate of transition. It is assumed that the reaction obeys a maximum time-dependent rather than time-independent negative free energy change. The product persists in the metastable state due to a high activation barrier to later transition. © 1991.
R. Ghez, J.S. Lew
Journal of Crystal Growth
T.N. Morgan
Semiconductor Science and Technology
Eloisa Bentivegna
Big Data 2022
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021