Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The phenomenon of metastable phase formation during a constant temperature and constant pressure thin film reaction is explained by a kinetic model emphasizing the rate of transition. It is assumed that the reaction obeys a maximum time-dependent rather than time-independent negative free energy change. The product persists in the metastable state due to a high activation barrier to later transition. © 1991.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P.C. Pattnaik, D.M. Newns
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures