Conference paper
Novel circuits to improve SRAM performance in PD/SOI technology
R.V. Joshi, A.J. Bhavnagarwala, et al.
IEEE International SOI Conference 2001
The Letter describes the first experimental result of a high-speed low-power ECL-based AC-coupled complementary push-pull circuit. Implemented in a 0.8µm high-performance fully complementary bipolar technology with 50GHz npn transistor and 13GHz pnp transistor, a power-delay product of 34fJ (23.2ps at 1.48mW) has been achieved compared with 67 fJ (45 ps at 1.48mW) for the npn-only ECL circuit. © 1993, The Institution of Electrical Engineers. All rights reserved.
R.V. Joshi, A.J. Bhavnagarwala, et al.
IEEE International SOI Conference 2001
R.V. Joshi, F. Yee, et al.
IEEE International SOI Conference 2002
R. Puri, C.T. Chuang
ISLPED 1999
B.S. Wu, C.T. Chuang, et al.
IEEE Transactions on Electron Devices