M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We describe a metal base transistor structure using amorphous silicon prepared from a silane glow discharge. We give some of the operating characteristics and evidence for true injection. The highest measured injection ratio was 8%. We discuss the reasons for the low injection ratios and suggest some improvements. © 1978.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Michiel Sprik
Journal of Physics Condensed Matter