M.A. Frisch, W. Reuter, et al.
Review of Scientific Instruments
Using a combined SIMS-XPS system it is shown that the much lower secondary ion yield of Ge+ sputtered from germanium under 10 keV O+2 bombardment at normal incidence compared to the Si+ yield sputtered from silicon is due to the much smaller uptake of oxygen in germanium vs silicon. Data are also presented on the chemistry induced in b oth elements as a function of the angle of incidence of the O+2 beam. © 1986.
M.A. Frisch, W. Reuter, et al.
Review of Scientific Instruments
A. Wucher, F. Novak, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
W. Reuter, K. Wittmaack
Applications of Surface Science
A. Wucher, W. Reuter
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films