Y. Tomkiewicz, B.A. Scott, et al.
Physical Review Letters
Compositional, structural and transport data are presented for amorphous hydrogenated silicon (a-Si) prepared by homogeneous chemical vapor deposition (HOMOCVD). We find a remarkable similarity in properties between HOMOCVD and plasma a-Si, including a nearly identical range (250-300°C) for the preparation of highly photoconductive films. However, unlike plasma material, HOMOCVD a-Si exhibits negligible photo-induced instabilities (Staebler-Wronski effect) and low spin concentrations over a wide span of deposition conditions. These results indicate that a significant defect-creating reaction, most likely surface Si-H bond scission, is occurring in the plasma environment, but absent in HOMOCVD.
Y. Tomkiewicz, B.A. Scott, et al.
Physical Review Letters
M.L. Dakss, L. Kuhn, et al.
Applied Physics Letters
A.G. Schrott, J.A. Mishwich, et al.
Materials Research Society Symposium - Proceedings
B.A. Scott, R.D. Estes
Applied Physics Letters