105-GHz Bandwidth Metal-Semiconductor-Metal Photodiode

Abstract

We report the fabrication and characterization of a metal-semiconductor-metal (MSM) Schottky-barrier photodiode with a measured impulse response shorter than S ps and a bandwidth of 105 GHz at a bias voltage of 0.5 V. We also show the experimental results to be in good agreement with numeric calculations. Because of its high performance and process compatibility with GaAs FET's, this type of photodiode is very well suited for monolithic micro- and MillimeterWave optoelectronic circuits (MMOC's). © 1988 IEEE.