Conference paper
Noise performance scaling in high-speed silicon RF technologies
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SiRF 2003
Paper
100 GHz dynamic frequency divider in SiGe bipolar technology
Abstract
A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM's 0.12 μm SiGe technology with fτ of 207 GHz and fMAX of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM's 0.18 μm SiGe BiCMOS technology.
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