Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs
- E. Calleja
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates
- M. Wittmer
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Phase sensitive detection of persistent spectral holes using synchronous ultrasonic modulation
- W.E. Moerner
- A.L. Huston
- 1986
- Applied Physics Letters
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas
- G.A. Rodríguez
- R.M. Hart
- et al.
- 1986
- Applied Physics Letters
Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
- F.F. Morehead
- R.F. Lever
- 1986
- Applied Physics Letters
Compound materials for reversible, phase-change optical data storage
- M. Chen
- K.A. Rubin
- et al.
- 1986
- Applied Physics Letters
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
- L. Vina
- W.I. Wang
- 1986
- Applied Physics Letters
Photoexcited transport in GaAs/AlAs quantum wells
- R.T. Collins
- K.V. Klitzing
- et al.
- 1986
- Applied Physics Letters
Spatial location of electron trapping defects on silicon by scanning tunneling microscopy
- M.E. Welland
- R.H. Koch
- 1986
- Applied Physics Letters