G.R. Johnson, B.C. Cavenett, et al.
Applied Physics Letters
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.
G.R. Johnson, B.C. Cavenett, et al.
Applied Physics Letters
L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984
M. Heiblum, W.I. Wang, et al.
Journal of Applied Physics
L. Viña, G.E.W. Bauer, et al.
Surface Science