Publications

177 results for J. Woodall

Highly carbon-doped p-type Ga_0.5In_0.5As and Ga _0.5In_0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- - T.P. Chin
  - P.D. Kirchner
  - et al.
- 1991
- Applied Physics Letters
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- - Z. Hang
  - D. Yan
  - et al.
- 1991
- Physical Review B
Comment on Electronic structure of ideal metal/GaAs contacts
- - J. Freeouf
  - J. Woodall
  - et al.
- 1991
- Physical Review Letters
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- - J. Woodall
  - Alan C. Warren
  - et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- - Alan C. Warren
  - J. Woodall
  - et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- - S. Chang
  - I.M. Vitomirov
  - et al.
- 1991
- Physical Review B
Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- - J. Freeouf
  - Alan C. Warren
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- - X. Yin
  - H.-M. Chen
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
- - K. Mahalingam
  - N. Otsuka
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- - S. Chang
  - I.M. Vitomirov
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures