PaperPhotoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structureD. Yan, Fred H. Pollak, et al.Applied Physics Letters
PaperSurface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gatesJ. Freeouf, Alan C. Warren, et al.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperAccumulation capacitance for GaAs-SiO2 interfaces with Si interlayersJ. Freeouf, D.A. Buchanan, et al.Applied Physics Letters
PaperConfirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopyS. Chang, I.M. Vitomirov, et al.Physical Review B
