Conference paper
INTERACTION BETWEEN Ti AND SiO//2.
C.-Y. Ting, M. Wittmer, et al.
ECS Meeting 1983
The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height. We report a difference of 50 mV in barrier height for Hg Schottky diodes on Si(111) surfaces with different surface terminations. © 1993.
C.-Y. Ting, M. Wittmer, et al.
ECS Meeting 1983
D.E. Eastman, J. Freeouf
Physical Review Letters
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
M. Wittmer, P. Fahey, et al.
Physical Review Letters