M. Wittmer, C.-Y. Ting, et al.
Thin Solid Films
The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height. We report a difference of 50 mV in barrier height for Hg Schottky diodes on Si(111) surfaces with different surface terminations. © 1993.
M. Wittmer, C.-Y. Ting, et al.
Thin Solid Films
R.A. Pollak, F. Holtzberg, et al.
Physical Review Letters
J. Freeouf, Alan C. Warren, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G.M.W. Kroesen, G.S. Oehrlein, et al.
JES