D.E. Eastman, J. Freeouf
Physical Review Letters
The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height. We report a difference of 50 mV in barrier height for Hg Schottky diodes on Si(111) surfaces with different surface terminations. © 1993.
D.E. Eastman, J. Freeouf
Physical Review Letters
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JES
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