A binary tunnel field effect transistor with a steep sub-threshold swing and increased on current
- Ram Asra
- Kota V. R. M. Murali
- et al.
- 2010
- Japanese Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.