Publications

14 results for Alain C. Diebold

Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf_0.5Zr_0.5O₂films
- - Vineetha Mukundan
  - Steven Consiglio
  - et al.
- 2020
- Applied Physics Letters
Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
- - Sonal Dey
  - Kai-Hung Yu
  - et al.
- 2017
- JVSTA
Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology
- - Dhairya Dixit
  - Samuel O'Mullane
  - et al.
- 2015
- J. Micro/Nanolithogr. MEMS MOEMS
Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry
- - Dhairya Dixit
  - Samuel O'Mullane
  - et al.
- 2015
- SPIE Advanced Lithography 2015
Optical properties of pseudomorphic Ge_1-xSn_x (x = 0 to 0.11) alloys on Ge(001)
- - Manasa Medikonda
  - Gangadhara R. Muthinti
  - et al.
- 2014
- JVSTB
Electrical enhancement and higher-k engineering in ultra-thin atomic layer deposited Hf_1-xAl_xO_y films
- - K. Tapily
  - S. Consiglio
  - et al.
- 2014
- ECS J. Solid State Sci. Technol.
Higher-K formation in atomic layer deposited Hf_1-xAl_xO_y
- - Kandabara Tapily
  - Steven Consiglio
  - et al.
- 2014
- ECSSMEQ 2014
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO₂and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
- - Steven Consiglio
  - Kandabara Tapily
  - et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf _1-xZr_xO₂ gate dielectrics deposited by a cyclical deposition and annealing scheme
- - Relja Vasić
  - Steven Consiglio
  - et al.
- 2013
- Journal of Applied Physics
Effects of stress on the dielectric function of strained pseudomorphic Si _1-xGe _x alloys from 0 to 75 Ge grown on Si (001)
- - Gangadhara Raja Muthinti
  - Manasa Medikonda
  - et al.
- 2012
- Journal of Applied Physics