Application of electron and ion beam analysis techniques to microelectronics
- T.S. Kuan
- P.E. Batson
- et al.
- 1992
- IBM J. Res. Dev
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226 results for Rudolf M. Tromp
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
- F.K. LeGoues
- M. Horn-Von Hoegen
- et al.
- 1991
- Physical Review B
Are bare surfaces detrimental in epitaxial growth?
- M. Copel
- R.M. Tromp
- 1991
- Applied Physics Letters
A new two-dimensional particle detector for a toroidal electrostatic analyzer
- R.M. Tromp
- M. Copel
- et al.
- 1991
- Review of Scientific Instruments
Design of a new photo-emission/low-energy electron microscope for surface studies
- R.M. Tromp
- M.C. Reuter
- 1991
- Ultramicroscopy
Influence of surfactants in Ge and Si epitaxy on Si(001)
- M. Copel
- M.C. Reuter
- et al.
- 1990
- Physical Review B
Microstructure and strain relief of Ge films grown layer by layer on Si(001)
- F. Legoues
- M. Copel
- et al.
- 1990
- Physical Review B
Electronic states due to surface doping: Si(111)3×3B
- Efthimios Kaxiras
- K.C. Pandey
- et al.
- 1990
- Physical Review B
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
Spectroscopy with the scanning tunnelling microscope: A critical review
- R.M. Tromp
- 1989
- Journal of Physics Condensed Matter