High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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100 results for Steven J. Koester
High-frequency noise performance of SiGe p-channel MODFETs
- S.J. Koester
- J.O. Chu
- et al.
- 2000
- Electronics Letters
High transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters
Determination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
Negative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Electrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
Weak localization in back-gated S quantum-well wires fabricated by reactive ion etching
- S.J. Koester
- K. Ismail
- et al.
- 1996
- Physical Review B - CMMP