Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implantD.K. SadanaA. Acovicet al.1992IEDM 1992
Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor depositionA. ZaslavskyD.A. Grützmacheret al.1992Applied Physics Letters
Boron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistorsD.K. SadanaA. Acovicet al.1992Applied Physics Letters
Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVDT.O. SedgwickV.P. Kesanet al.1991IEDM 1991