Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast
- Kunal Mukherjee
- Brent A. Wacaser
- et al.
- 2017
- Applied Physics Letters
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This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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