A Review of Reliability in Gate-All-Around Nanosheet Devices
- 2024
- Micromachines
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60 results for Miaomiao Wang
Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
- Michael Titze
- Alex Belianinov
- et al.
- 2024
- ACS Applied Electronic Materials
A Unified TDDB Model for BEOL Dielectrics of Various Structures and Thick FEOL Dielectrics
- Kenji Okada
- Kei Date
- et al.
- 2024
- IEEE Transactions on Electron Devices
Improved Air Spacer for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- IEEE Transactions on Electron Devices
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
Reliability of advanced high-k/metal-gate n-FET devices
- J.H. Stathis
- M. Wang
- et al.
- 2010
- Microelectronics Reliability
Recovery study of negative bias temperature instability
- Miaomiao Wang
- Sufi Zafar
- et al.
- 2009
- Microelectronic Engineering