Hardware and Software Co-optimization for the Initialization Failure of the ReRAM-based Cross-bar Array
- Youngseok Kim
- S. Kim
- et al.
- 2020
- ACM JETC
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194 results for Vijay Narayanan
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks
- Adra Carr
- John Rozen
- et al.
- 2015
- Applied Physics Letters
Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition
- Miri Choi
- Catherine Dubourdieu
- et al.
- 2014
- JVSTB
Structural, optical, and electrical properties of strained La-doped SrTiO3 films
- Miri Choi
- Agham B. Posadas
- et al.
- 2014
- Journal of Applied Physics
Incorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
- Martin D. McDaniel
- Agham Posadas
- et al.
- 2014
- Journal of Applied Physics
The quantum metal ferroelectric field-effect transistor
- David J. Frank
- Paul M. Solomon
- et al.
- 2014
- IEEE T-ED
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices
- Rajan K. Pandey
- Rajesh Sathiyanarayanan
- et al.
- 2013
- Journal of Applied Physics
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics
Aggressive SiGe channel gate stack scaling by remote Oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Solid State Letters