A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
- Clarissa Convertino
- C. B. Zota
- et al.
- 2021
- Nature Electronics
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41 results for C. B. Zota
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- Carlos Navarro
- Siegfried Karg
- et al.
- 2019
- Nature Electronics
High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- IEEE Electron Device Letters
A 40 GS/s 8b-DAC SST-TX in 7 nm FinFET CMOS for cryogenic quantum applications with 32kB SRAMbased RF-DDS AWG
- Marcel Kossel
- Matthias Brandli
- et al.
- 2024
- ESSERC 2024
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K
- F. Serra Di Santa Maria
- F. Balestra
- et al.
- 2023
- IRPS 2023
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications
- Francesco Serra Di Santa Maria
- Christoforos Theodorou
- et al.
- 2022
- ESSDERC 2022
A cryogenic SRAM based arbitrary waveform generator in 14 nm for spin qubit control
- Mridula Prathapan
- Peter Mueller
- et al.
- 2022
- ESSCIRC 2022
A system design approach toward integrated cryogenic quantum control systems
- Mridula Prathapan
- Peter Mueller
- et al.
- 2022
- WOLTE 2022
Cryogenic Characterization and Modeling of 14 nm Bulk FinFET Technology
- Asma Chabane
- Mridula Prathapan
- et al.
- 2021
- ESSCIRC 2021
Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs with Quantum Well Heterostructures
- Clarissa Convertino
- L. Vergano
- et al.
- 2020
- EUROSOI-ULIS 2020