X-ray transmission through low atomic number particles

Abstract

Defect printability studies have been carried out using low atomic number particles mounted on thin silicon membranes. Transfer of the particle image to a resist-coated wafer was accomplished using synchrotron radiation from the VUV electron storage ring at Brookhaven National Laboratory and subsequent resist development. Residual resist images resulting from the particles on the membrane were measured with an SEM. A semi-empirical model has been developed that can approximately predict the size of the printed image on the wafer. Data is presented which shows that over-development of the photoresist, which removes the residual particulate images, can be achieved while maintaining exceptional line-width control in x-ray lithography. © 1989.