PaperTA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO2 Injectors and a Floating Polycrystalline Silicon Storage LayerD.J. DiMaria, K.M. DeMeyer, et al.IEEE T-ED
PaperRate of formation of silicon dioxide; Semiconducting ruthenium silicideF.M. D'Heurle, R.D. Frampton, et al.Applied Physics Letters
PaperResidual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure OxygenE.A. Irene, D.W. Dong, et al.JES
