R.T. Lynch, L. Yang, et al.
Electronics Letters
The low-current I-V characteristics of AlxGa1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.
R.T. Lynch, L. Yang, et al.
Electronics Letters
Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials
Ulf Gennser, V.P. Kesan, et al.
Applied Physics Letters
E.S. Yang, C.M. Wu, et al.
Applied Physics Letters