D.L. Harame, J.M.C. Stork, et al.
VLSI Technology 1990
Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.
D.L. Harame, J.M.C. Stork, et al.
VLSI Technology 1990
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IEDM 1996
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