High performance 0.1μm nMOSFET's with 10 ps/stage delay (85 K) at 1.5 V power supply

Abstract

Very high performance 0.1 μm nMOSFETs are fabricated with 3.5 μm gate oxide and shallow arsenic/boron (halo) source-drain extension. A 10 ps/stage delay is recorded at 85 K from a 0.08 μm channel ring oscillator, which is the fastest switching speed ever reported for any silicon device. The delay at room temperature is 13 ps/stage. Unity-current-gain frequency cutoffs (fT) of a 0.09 μm channel device are 119 GHz at 85 K and 93 GHz at 300 K. Record high saturation transconductances, 1040 mS/μm at 85 K and 740 mS/mm at 300 K, are obtained from a 0.05 μm channel device. Good subthreshold characteristics are achieved for 0.1 μm channel devices.