Universality of short-channel effects in undoped-body silicon nanowire MOSFETs

Abstract

Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of LEFF/λ, where LEFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by ∼2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control. © 2010 IEEE.