Buckling characterization of gate all around silicon nanowires
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2013
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of LEFF/λ, where LEFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by ∼2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control. © 2010 IEEE.
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2013
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2014
Amlan Majumdar
Journal of Applied Physics
Yang Liu, Mathieu Luisier, et al.
IEEE T-ED