Amlan Majumdar, Sarunya Bangsaruntip, et al.
IEDM 2012
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of LEFF/λ, where LEFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by ∼2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control. © 2010 IEEE.
Amlan Majumdar, Sarunya Bangsaruntip, et al.
IEDM 2012
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2014
Eduard Cartier, Amlan Majumdar, et al.
ESSDERC 2017
Jin Cai, Amlan Majumdar, et al.
IEDM 2007