Conference paper
Metal-Clad InP Cavities for Nanolasers on Si
Preksha Tiwari, Svenja Mauthe, et al.
IPC 2020
We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future receiverless communication.
Preksha Tiwari, Svenja Mauthe, et al.
IPC 2020
Svenja Mauthe, Philipp Staudinger, et al.
CLEO 2019
Preksha Tiwari, Svenja Mauthe, et al.
NUSOD 2020
Pengyan Wen, Preksha Tiwari, et al.
Nature Communications