P. Gueret
Electronics Letters
Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.
P. Gueret
Electronics Letters
D.J. Arent, L. Brovelli, et al.
Applied Physics Letters
P. Guéret, E. Marclay, et al.
Applied Physics Letters
R.F. Broom, P. Gueret, et al.
ISSCC 1978