B. Zimmermann, E. Marclay, et al.
Journal of Applied Physics
Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.
B. Zimmermann, E. Marclay, et al.
Journal of Applied Physics
P. Gueret, A. Baratoff, et al.
EPL
P. Guéret, E. Marclay, et al.
Solid State Communications
P. Gueret
Electronics Letters